Datasheet4U Logo Datasheet4U.com

BUL741FP - High voltage fast-switching NPN Power Transistor

Download the BUL741FP datasheet PDF. This datasheet also covers the BUL741 variant, as both devices belong to the same high voltage fast-switching npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

Key Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUL741_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BUL741 Silicon NPN Power Transistor Inchange Semiconductor
BUL742 Silicon NPN transistor BLUE ROCKET ELECTRONICS
BUL742A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
BUL742C HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
BUL74A NPN Transistor Seme LAB

Other Datasheets by STMicroelectronics

Part Number Description
BUL741 High voltage fast-switching NPN Power Transistor
BUL742 NPN Transistor
BUL1101E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL1102E High voltage fast-switching NPN power transistor
BUL116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUL741 BUL741FP High voltage fast-switching NPN power transistors Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 3 2 1 TO-220 3 2 1 TO-220FP Figure 1.