BUS133 Datasheet | Inchange Semiconductor

DESCRIPTION - High Switching Speed - Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS133 500V (Min)-BUS133A APPLICATIONS - Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS133A 1000 VCEO Collector-Emitter Voltage BUS133 BUS133A 450 500 VEBO IC ICM IB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 15 20 10 15 175 200 -65~200 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS133/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL...