BUS133H
BUS133H is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Switching Speed
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)
APPLICATIONS
- Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCES
Collector- Emitter Voltage (VBE= 0)
VCEO Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
15 A
ICM Collector Current-Peak
20 A
IB Base Current
10 A
IBM Base Current-Peak
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
15 175 200 -65~200
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS...
