Datasheet4U Logo Datasheet4U.com

BUS133H Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.

General Description

·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 10 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 15 175 200 -65~200 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS133H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;

BUS133H Distributor & Price

Compare BUS133H distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.