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BUT21B Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- BUT21B 450V(Min)- BUT21C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 BUT21B BUT21C 750 850 V VCEO BUT21B Collector-Emitter Voltage BUT21C 400 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 5A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 4 100 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc Product Specification BUT21B/C isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUT21B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUT21B BUT21C IC= 0.1A ;IB= 0;

L= 25mH VCE(sat) Collector-Emitter Saturation Voltage BUT21B IC= 3A;

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