Datasheet4U Logo Datasheet4U.com

BUT211 - Silicon Diffused Power Transistor

General Description

Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUT21B Silicon NPN Power Transistor Inchange Semiconductor
BUT21BF Silicon NPN Power Transistor Inchange Semiconductor
BUT21C Silicon NPN Power Transistor Inchange Semiconductor
BUT21CF Silicon NPN Power Transistor Inchange Semiconductor
BUT232V NPN TRANSISTOR POWER MODULE STMicroelectronics

Other Datasheets by NXP Semiconductors

Part Number Description
BUT211X Silicon Diffused Power Transistor
BUT21BF (BUT21BF / BUT21CF) Silicon Diffused Power Transistor
BUT21CF (BUT21BF / BUT21CF) Silicon Diffused Power Transistor
BUT11 Silicon diffused power transistors
BUT11A Silicon diffused power transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 100 2.0 0.1 UNIT V V A A W V µs Tmb ≤ 25 ˚C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IBon = 0.