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BUT211 Datasheet Silicon Diffused Power Transistor

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211.

General Description

Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP.

MAX.

BUT211 Distributor