BUT211 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 100 2.0 0.1 UNIT V V A A W V µs Tmb ≤ 25 ˚C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IBon = 0.3 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the...