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BUT11 - Silicon diffused power transistors

General Description

High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package.

Converters Inverters Switching regulators

Motor control systems.

Key Features

  • ia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P. O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The N.

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Other Datasheets by NXP Semiconductors

Part Number Description
BUT11A Silicon diffused power transistors
BUT11AF Silicon Diffused Power Transistor
BUT11AI Silicon Diffused Power Transistor
BUT11APX Silicon Diffused Power Transistor
BUT11APX-1200 Silicon Diffused Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK106 BUT11; BUT11A andbook, halfpage handbook, halfpage 2 1 MBB008 3 1 2 3 Fig.1 Simplified outline (TO-220AB) and symbol.