NXP Semiconductors BUT11
Silicon diffused power transistors
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BUT11 |
|---|---|
| Datasheet | BUT11 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon diffused power transistors |
| Buy | Stock & Price |
DESCRIPTION
High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package.APPLICATIONS
● Converters● Inverters
● Switching regulators
● Motor control systems. PINNING PIN 1 2 3
DESCRIPTION
base collector; connected to mounting base emitter MBK106 BUT11; BUT11A andbook, halfpage handbook, halfpage 2 1 MBB008 3 1 2 3 Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig. 4 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 13 1 P...
