BUT11 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK106 BUT11; BUT11A andbook, halfpage handbook, halfpage 2 1 MBB008 1 2 3 Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig. 4 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the...