BUT11 Datasheet PDF

APPLICATIONS

NPN SILICON TRANSISTOR TO-220

ABSOLUTE MAXIMUM RATINGS

(Ta=25°c) Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Dissipation (Tc=25°c) Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC IC IB IB PC Tj Tstg Rating 850 1000 400 450 9 5 10 2 4 100 150 -65~150 Unit V V V V V A A A A W °c °c

ELECTRICAL CHARACTERISTICS

(Ta=25°c) Characterristic Collector Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Saturation Voltage Base- Emitter Saturation Voltage Turn-On Time Storage Time Fall Time :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA Symbol VCEO(SUS) ICES IEBO VCE(sat) VBE(sat) ton tstg tf Test Condition IC=100mA, IB=0 Min 400 450 Typ Max Unit V VCE= 850V , VEB= 0 VCE= 1000V , VEB= 0 VEB= 9V , IC=0 IC=3A, IB=0.6A IC=2.5A, IB=0.5A IC=3A, IB=0.6A IC=2.5A, IB=0.5A VCC= 250V , IC=2.5A IB1= IB2=0.5A 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 V mA mA µA V V V V µS µS µS Wing Shing Computer Components Co., (H.