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BUV10

Manufacturer: Inchange Semiconductor

BUV10 datasheet by Inchange Semiconductor.

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BUV10 Datasheet Details

Part number BUV10
Datasheet BUV10_InchangeSemiconductor.pdf
File Size 111.10 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
BUV10 page 2

BUV10 Overview

·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. BUV10 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;.

BUV10N from other manufacturers

View BUV10N datasheet index

Brand Logo Part Number Description Other Manufacturers
Seme LAB Logo BUV10N Bipolar NPN Device in a Hermetically sealed TO3 Metal Package Seme LAB
Inchange Semiconductor logo - Manufacturer

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