BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Seme LAB

Datasheet Details

Part number	BUV10N
Manufacturer	Seme LAB
File Size	10.96 KB
Description	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Datasheet	BUV10N Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BUV10	Silicon NPN Power Transistor	Inchange Semiconductor
BUV11	20 AMPERES NPN SILICON POWER METAL TRANSISTOR	Motorola Inc
BUV11	SITCHMODE Series NPN Silicon Power Transistor	ON Semiconductor
BUV12	NPN Transistor	INCHANGE
BUV18	NPN High Current Switching Transistors	ST Microelectronics

Other Datasheets by Seme LAB

Part Number	Description
BUV12	Bipolar NPN Device
BUV18	NPN HIGH CURENT SWITCHING TRANSISTORS
BUV18X	Bipolar NPN Device
BUV19	NPN HIGH CURENT SWITCHING TRANSISTORS
BUV20	NPN MULTI - EPITAXIAL POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BUV10N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions 22.23 (0.875) max. Min. Typ. Max. 125 25 Units V A Hz @ (VCE / IC) 20 10M 60 175 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.