Datasheet Details
| Part number | BUW70 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUW70-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BUW70.
| Part number | BUW70 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUW70-InchangeSemiconductor.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in clocked voltage converters.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 150 V 100 V 7 V 10 A 3 A 80 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW70 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
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