BUX11P
BUX11P is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage
- High Switching Speed
- High Current Current Capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Motor control
- Linear and switching industrial equipment
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage VBE= -1.5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
