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BUX78 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor BUX78.

General Description

·Contunuous Collector Current-IC= -5A ·Collector Power Dissipation- : PC= 40W @TC= 25℃ ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators and general purpose power amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A IB Base Current-Continuous -0.8 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.4 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA;

IB= 0 VCES Collector-Emitter Voltage IC= -2mA;

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