C3783 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed APPLICATIONS

High speed and high voltage switching applications.

Switching regulator applications.

High speed DC-DC converter applications.

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C3783 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	C3783
Manufacturer	Inchange Semiconductor
File Size	198.54 KB
Description	Silicon NPN Power Transistor
Datasheet	C3783 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3783 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 7A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3A 100 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.