D1187
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.) @ IC= 6A
- High Power Dissipation
APPLICATIONS
- High power switching applications
- DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 10 A
IBB Base Current-Continuous
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
2A
80 W
150 ℃
-55~150
℃ isc Website：.iscsemi.cn
Free Datasheet http://../
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SD1187
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL...
