D1413 Overview
Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A ;IB=4mA IC=2A ;IB=4mA VCB=60V; VCE=2V 2000 1000 MIN...