D1416 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
D1416 datasheet by Inchange Semiconductor.
| Part number | D1416 |
|---|---|
| Datasheet | D1416-INCHANGE.pdf |
| File Size | 126.05 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
View all Inchange Semiconductor datasheets
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| D1410 | Silicon NPN Darlington Power Transistor |
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