D1416
Overview
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Complement to Type 2SB1021.
| Part | D1416 |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 126.05 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D1413 | Inchange Semiconductor | 2SD1413 |
| D1410A | Toshiba | 2SD1410A |
| D1411 | SavantIC | 2SD1411 |
| D1412A | Toshiba | 2SD1412A |
| D1414 | KEC | KTD1414 |