Datasheet Details
| Part number | D1416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 126.05 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | D1416-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product.
| Part number | D1416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 126.05 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | D1416-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·plement to Type 2SB1021 APPLICATIONS ·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 80 V 5V IC Collector Current-Continuous 7A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Part Number | Description |
|---|---|
| D1410 | Silicon NPN Darlington Power Transistor |
| D1412 | Silicon NPN Power Transistor |
| D1404 | Silicon NPN Power Transistor |