Datasheet Details
| Part number | D1410 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 147.98 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | D1410-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor.
| Part number | D1410 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 147.98 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | D1410-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE 300 250 5 6 1 2.0 UNIT V V V A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 30 150 -55~150 W ℃ ℃ isc Website：.iscsemi.cn Free Datasheet http://.datasheet-pdf./ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1410 TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ;
L= 40mH 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D1410A | 2SD1410A | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| D1412 | Silicon NPN Power Transistor |
| D1416 | Silicon NPN Darlington Power Transistor |
| D1404 | Silicon NPN Power Transistor |