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D1410 - Silicon NPN Darlington Power Transistor

General Description

Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATIN

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE 300 250 5 6 1 2.0 UNIT V V V A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 30 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.