Datasheet Details
| Part number | D1412 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 131.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D1412-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D1412 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 131.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D1412-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·plement to Type 2SB1019 APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 7A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D1412A | 2SD1412A | Toshiba |
| Part Number | Description |
|---|---|
| D1410 | Silicon NPN Darlington Power Transistor |
| D1416 | Silicon NPN Darlington Power Transistor |
| D1404 | Silicon NPN Power Transistor |