D1412 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Complement to Type 2SB1019 APPLICATIONS

High current switching applications.

Power amplifier applications.

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D1412 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D1412
Manufacturer	Inchange Semiconductor
File Size	131.25 KB
Description	Silicon NPN Power Transistor
Datasheet	D1412 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 7A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.