Datasheet4U Logo Datasheet4U.com

D1670 - 2SD1670

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) High DC Current Gain: hFE= 1000( Min.) @ IC= 10A Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS

For low speed high current switching industrial use.

📥 Download Datasheet

Full PDF Text Transcription for D1670 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for D1670. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage:...

View more extracted text
r Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS ·For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ w w s c s i . w VALUE 150 100 8 ±10 ±20 1 3.5 UNIT V n c .

More Datasheets from Inchange Semiconductor

Part Number Description
D1656 2SD1656