D1912
DESCRIPTION
- Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min)
- Wide Area of Safe Operation
- Low Collector Saturation Voltage
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @Ta=25℃
1.75 W
PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30
℃
Tstg
Storage Temperature
-55~150
℃ isc Website：.iscsemi.cn
Free Free Datasheet Datasheethttp://../ http://..
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1912
TYP.
UNIT
V(BR)CEO...
Representative D1912 image (package may vary by manufacturer)
