Datasheet Details
| Part number | D1912 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 131.46 KB |
| Description | 2SD1912 |
| Datasheet | D1912-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part number | D1912 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 131.46 KB |
| Description | 2SD1912 |
| Datasheet | D1912-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ 8 A 1.75 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：.iscsemi.cn Free FreeDatasheet Datasheethttp://../ http://..
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1912 TYP.
| Part Number | Description |
|---|---|
| D1918 | Silicon NPN Power Transistor |
| D1980 | Silicon NPN Power Transistor |