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D44C2 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C2 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators;

low and high frequency inverters/ converters and many others.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 40 V 30 V 5 V 4 A 6 A 1 A 30 W 150 ℃ -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.2 ℃/W D44C2 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;

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