Datasheet Details
| Part number | D45C3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.47 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | D45C3-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | D45C3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.47 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | D45C3-InchangeSemiconductor.pdf |
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·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C3 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators;
low and high frequency inverters/ converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -40 V -30 V -5 V -4 A -6 A -1 A 30 W 150 ℃ -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.2 ℃/W D45C3 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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D45C3 | PNP POWER TRANSISTORS | GE |
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| D458 | 2SD458 |
| D45VH | Silicon PNP Power Transistors |