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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FRK250
DESCRIPTION ·27A, 200V, RDS(on) = 0.1Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate
(GAMMA DOT) exposure.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
27
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max.
FRK250 Datasheet
