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IRF246 - N-Channel MOSFET Transistor

General Description

Drain Current ID=14A@ TC=25℃ Drain Source Voltage : VDSS= 275V(Min) Static Drain-Source On-Resistance : RDS(on) =0.28Ω(Max) Nanosecond Switching Speeds APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver Audio amplifier and servo m

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF246 DESCRIPTION ·Drain Current ID=14A@ TC=25℃ ·Drain Source Voltage : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.28Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 275 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 14 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.