IRF246 Overview
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching...
IRF246 Key Features
- 14A and 13A, 275V and 250V
- rDS(ON) = 0.28Ω and 0.34Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- 275V, 250V DC Rated
- 120V AC Line System Operation
- Related Literature
