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IRF245 - N-Channel Power MOSFET

Datasheet Summary

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 14A and 13A, 275V and 250V.
  • rDS(ON) = 0.28Ω and 0.34Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • 275V, 250V DC Rated - 120V AC Line System Operation.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF244 IRF245 IRF24.

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Datasheet Details

Part number IRF245
Manufacturer Intersil Corporation
File Size 70.68 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF245 Datasheet
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Full PDF Text Transcription

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Semiconductor IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. January 1998 Features • 14A and 13A, 275V and 250V • rDS(ON) = 0.28Ω and 0.
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