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IRF442 - N-Channel MOSFET Transistor

General Description

VGS Rated at ±20V Silicon Gate for Fast Switching Speeds IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature Rugged APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF442 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 7.0 A Total Dissipation@TC=25℃ 125 W Max.