IRF440 Description
IRF440 Data Sheet March 1999 File Number 2308.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...
IRF440 Key Features
- 8A, 500V
- rDS(ON) = 0.850Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power-Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”