IRF440 Datasheet and Specifications PDF

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IRF440 Data Sheet March 1999 File Number 2308.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desig.

* 8A, 500V
* rDS(ON) = 0.850Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power-Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to P.

·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applic.

emiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF440
*ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resista.

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-.

* Repetitive Avalanche Ratings
* Dynamic dv/dt Rating
* Hermetically Sealed
* Simple Drive Requirements
* ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain C.