Datasheet4U Logo Datasheet4U.com

IRF451 - N-Channel MOSFET Transistor

General Description

13A,450V Low RDS(on) at high voltage Improved inductive ruggedness Low input Characteristics Fast switching times Extended safe operating area APPLICATIONS Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,a

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF451 N-Channel MOSFET STMicroelectronics
IRF451 N-Channel Power MOSFET Samsung semiconductor
IRF450 N-Channel MOSFET STMicroelectronics
IRF450 N-Channel Power MOSFET Samsung semiconductor
IRF450 N-Channel Power MOSFET Seme LAB

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF450 N-Channel MOSFET Transistor
IRF452 N-Channel MOSFET Transistor
IRF453 N-Channel MOSFET Transistor
IRF420 N-Channel MOSFET Transistor
IRF421 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF451 DESCRIPTION ·13A,450V ·Low RDS(on) at high voltage ·Improved inductive ruggedness ·Low input Characteristics ·Fast switching times ·Extended safe operating area APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 450 ±20 V V Drain Current-continuous@ TC=25℃ 13 A Total Dissipation@TC=25℃ 125 W Max.