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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF452
DESCRIPTION ·11A,500V ·Low RDS(on) at high voltage ·Improved inductive ruggedness ·Low input Characteristics ·Fast switching times ·Extended safe operating area
APPLICATIONS ·Designed for applications such as switching regulators,
switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
500 ±20
V V
Drain Current-continuous@ TC=25℃ 11 A
Total Dissipation@TC=25℃
125 W
Max.
IRF452 Datasheet
