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IRF452 - N-Channel MOSFET Transistor

General Description

11A,500V Low RDS(on) at high voltage Improved inductive ruggedness Low input Characteristics Fast switching times Extended safe operating area APPLICATIONS Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,an

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF452 DESCRIPTION ·11A,500V ·Low RDS(on) at high voltage ·Improved inductive ruggedness ·Low input Characteristics ·Fast switching times ·Extended safe operating area APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 11 A Total Dissipation@TC=25℃ 125 W Max.