IRF452
IRF452 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- 11A,500V
- Low RDS(on) at high voltage
- Improved inductive ruggedness
- Low input Characteristics
- Fast switching times
- Extended safe operating area
APPLICATIONS
- Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
500 ±20
Drain Current-continuous@ TC=25℃ 11 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-A
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 30
℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25m A
VGS(TH) Gate Threshold...
