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IRFP9530 - P-Channel MOSFET Transistor

General Description

purpose applications.

Key Features

  • Drain Current ID= -12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max).
  • Fast Switching.

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INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification IRFP9530 FEATURES ·Drain Current ID= -12A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.