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KSD1408 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Complement to Type KSB1017 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De

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isc Silicon NPN Power Transistor KSD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type KSB1017 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.4 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.