KSD5703 Datasheet | Inchange Semiconductor

DESCRIPTION - High Breakdown Voltage- ：VCBO= 1500V (Min) - High Switching Speed - Low Saturation Voltage APPLICATIONS - Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6V IC Collector Current- Continuous IC Collector Current- Pulse Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB=...