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KSD5703 - Silicon NPN Power Transistor

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Description

High Breakdown Voltage- ：VCBO= 1500V (Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emit

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Datasheet Details

Part number KSD5703
Manufacturer Inchange Semiconductor
File Size 125.74 KB
Description Silicon NPN Power Transistor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5703 DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6V IC Collector Current- Continuous 10 A IC Collector Current- Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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