NJS KSD5703
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBo=1500V(Min)● High Switching Speed
● Low Saturation Voltage TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5703
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●' .' , 1 j3 PIN 1.BASE 2. COLLECTOR 3 EMITTER TO-3PO-OIS package
APPLICATIONS
● Designed for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 10 A Ic Collector Current- Pulse Collector Power Dissipation PC @ TC=25°C Tj Junction Temperature Tstg Storage Temperature Range 30 A 70 W 150 °C -55-150●c
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●» G t ^ -● J »-0 «- R -- I*—-* mm DIM MIN MAX A 24.30 24.70 B 15.20 15.80 C 5,20 5.80 D 0,65 0.85 F 3.30 3,90 G 3.90 4,10 K 4.30 4.70 J 0,80 1.00 K 18,30 18.70 L 1,90 2.10 N 10.70 11.10 Q 4.40 4.60 R 3.30 3.70 S 3.20 3,40 U 9,50 9.70 Y 1,90 2.10 Z 1.40 1.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.