KSD5703
KSD5703 is NPN Transistor manufactured by Fairchild Semiconductor.
High Voltage Color Display Horizontal Deflection Output (No Damper Diode)
- High Collector-Base Voltage : VCBO=1500V
- High Switching Speed t F = 0.3µs (Max.)
- For Color TV
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 10 30 70 150
- 55 ~ 150 Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) t F Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Test Condition VCE = 1400V, VBE=0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 8A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A VCC = 200V, IC = 6A IB1 = 1.2A, IB2=
- 2.4A RL = 33.3Ω 0.1 15 5.3 Min. Typ. Max. 1 10 1 40 7.3 5 1.5 0.3 V V µs Units m A µA m A
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
VCE = 5V
IC[A], COLLECTOR CURRENT
6 h FE, DC CURRENT GAIN
IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 0.8A IB = 0.6A
IB = 0.4A IB = 0.2A
0 0 2 4 6 8 10
1 0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE = 5V
VCE(sat)[V], SATURATION...