KSD5702 Datasheet | Fairchild Semiconductor

.. High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) - High Collector-Base Voltage : VCBO=1500V - High Switching Speed t F = 0.4µs (Max.) - For Color TV B Equivalent Circuit C 50Ω typ. E TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 6 16 60 150 - 55 ~ 150 Units V V V A A W °C °C Data Shee . Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) f T VF t F Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Damper Diode Turn On Voltage Fall Time Test Condition VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 3A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 1A IF = 6A VCC = 200V, IC = 4A IB1 = 0.8A, IB2 = - 1.6A RL = 50Ω 3 2 0.4 Min. 40 10 5 2 Typ. Max. 10 200 30 15 5 1.5 Units µA m A V V MHz V µs ©2000 Fairchild Semiconductor International . Rev. A, February 2000 Data Sheet 4 U . .. Typical Characteristics VCE = 5V IC[A], COLLECTOR CURRENT IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 800m A IB = 600m A IB = 40m A IB = 200m A h FE, DC CURRENT GAIN 0...