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KSD986 - Silicon NPN Power Transistor

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Part number KSD986
Manufacturer Inchange Semiconductor
File Size 216.45 KB
Description Silicon NPN Power Transistor
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Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter V

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