Datasheet Details
| Part number | KTA1042D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.02 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | KTA1042D-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KTA1042D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.02 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | KTA1042D-InchangeSemiconductor.pdf |
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·Low Collector-Emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 PC Rth j-a Total Power Dissipation @ Ta=25℃ Thermal Resistance,Junction to Ambient 1.25 100 TJ Junction Temperature 150 A W ℃/W ℃ Tstg Storage Temperature Range -55~150 ℃ KTA1042D isc website:.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA1042D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 V(BR)CBO * Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTA1042D | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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KTA1042L | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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| KTA1962 | Silicon PNP Power Transistors |