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KTA1042D - Silicon PNP Power Transistors

General Description

Low Collector-Emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 PC Rth j-a Total Power Dissipation @ Ta=25℃ Thermal Resistance,Junction to Ambient 1.25 100 TJ Junction Temperature 150 A W ℃/W ℃ Tstg Storage Temperature Range -55~150 ℃ KTA1042D isc website：www.iscsemi.