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KTA1042D Datasheet Silicon PNP Power Transistors

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Low Collector-Emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 PC Rth j-a Total Power Dissipation @ Ta=25℃ Thermal Resistance,Junction to Ambient 1.25 100 TJ Junction Temperature 150 A W ℃/W ℃ Tstg Storage Temperature Range -55~150 ℃ KTA1042D isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA1042D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -50mA;

IB= 0 V(BR)CBO * Collector-Base Breakdown Voltage IC= -1mA;

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