| Part | KTB2510 |
|---|---|
| Description | Silicon PNP Power Transistors |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 146.19 KB |
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) - Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A - High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V - Complement to Type KTD1510.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 65 | 65+ : 0.9009 USD 160+ : 0.7392 USD 245+ : 0.7161 USD 335+ : 0.693 USD |
View Offer |
| SHENGYU ELECTRONICS | 7222 | 1+ : 0.6125 USD 10+ : 0.6003 USD 100+ : 0.58 USD 1000+ : 0.56 USD |
View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| KTB2510 | KEC | EPITAXIAL PLANAR PNP TRANSISTOR |