KTB2510 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A ·High DC Current Gain.
KTB2510 is Silicon PNP Power Transistors manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
KEC |
KTB2510 | EPITAXIAL PLANAR PNP TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A ·High DC Current Gain.