KTB2510 - Silicon PNP Power Transistors

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Inchange Semiconductor

Datasheet Details

Part number	KTB2510
Manufacturer	Inchange Semiconductor
File Size	146.19 KB
Description	Silicon PNP Power Transistors
Datasheet	KTB2510 Datasheet
Additional preview pages of the KTB2510 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V Complement to Type KTD1510 APPLICATIONS High power amplifier applications Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

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Published: Nov 14, 2016 |