KTB2955 - Silicon PNP Power Transistors

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Complement to Type KTD3055 APPLICATIONS High power amplifier applications

stage application.

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Datasheet Details

Part number	KTB2955
Manufacturer	Inchange Semiconductor
File Size	145.18 KB
Description	Silicon PNP Power Transistors
Datasheet	KTB2955 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type KTD3055 APPLICATIONS ·High power amplifier applications ·Recommended for 30~35W audio frequency amplifier output stage application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.