KTB2955
KTB2955 is Silicon PNP Power Transistors manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
- plement to Type KTD3055
APPLICATIONS
- High power amplifier applications
- Remended for 30~35W audio frequency amplifier output stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
IB Base Current
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
-1 A 40 W 150 ℃
Tstg Storage Temperature
-55~150 ℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter...
