The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌComplementary to KTD3055. ᴌRecommended for 30Wᴕ35W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING -120 -120 -5 -10 -1.0 40 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
H
E Q
KTB2955
EPITAXIAL PLANAR PNP TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.00 6.70 MAX 13.60+_ 0.50
5.60 MAX
1.37 MAX 0.50
1.50 MAX 2.54
4.