Large Collector Current Capability-
: IC= 4A (Max)
Collector Power Dissipation-
: PC= 30W(Max)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for B/W TV horizontal deflection output
applications
ABSOLUTE MAXIMUM RATINGS(T
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isc Silicon NPN Power Transistor
DESCRIPTION ·Large Collector Current Capability-
: IC= 4A (Max) ·Collector Power Dissipation-
: PC= 30W(Max) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B/W TV horizontal deflection output
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
KTC1003
isc website：www.iscsemi.
KTC1003 Datasheet
