Datasheet Details
| Part number | KTC1003 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.52 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTC1003-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KTC1003 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.52 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTC1003-InchangeSemiconductor.pdf |
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·Large Collector Current Capability- : IC= 4A (Max) ·Collector Power Dissipation- : PC= 30W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTC1003 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTC1003 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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