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KTC2800 - Silicon NPN Power Transistors

General Description

High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) Complement to Type KTA1700 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1700 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 1.5 A IB Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.0 A 1.5 W 10 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor KTC2800 isc website： www.iscsemi.