KTD1414 - Silicon NPN Power Transistors

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Inchange Semiconductor

Datasheet Details

Part number	KTD1414
Manufacturer	Inchange Semiconductor
File Size	212.80 KB
Description	Silicon NPN Power Transistors
Datasheet	KTD1414 Datasheet
Additional preview pages of the KTD1414 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Hammer driver,pulse motor driver applications Power amplifier applications.

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Published: Nov 14, 2016 |