• Part: MBR3060WT
  • Description: Schottky Barrier Rectifier
  • Manufacturer: Inchange Semiconductor
  • Size: 152.27 KB
Download MBR3060WT Datasheet PDF
Inchange Semiconductor
MBR3060WT
FEATURES - Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating - Low forward voltage - Guarding for stress protection - 150℃ operating junction temperature - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS - Case: TO-3P package - Mounting position: Any ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VDC IF(AV) IFSM Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Average Rectified Forward Current (Per Leg) (Total) 15 30 Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) Junction Temperature -65~150 V V V A A ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark INCHANGE...