MBR3060WT
FEATURES
- Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating
- Low forward voltage
- Guarding for stress protection
- 150℃ operating junction temperature
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
MECHANICAL CHARACTERISTICS
- Case: TO-3P package
- Mounting position: Any
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS VDC IF(AV) IFSM
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current (Per Leg) (Total)
15 30
Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method)
Junction Temperature
-65~150
V V V A A ℃
Tstg Storage Temperature Range
-65~150 ℃ isc website:.iscsemi.
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