Download MBR3065 Datasheet PDF
Inchange Semiconductor
MBR3065
FEATURES - Dual Rectifier Conduction, Positive Center Tap - Low Power Loss/High Efficiency - High Current Capability - High Surge Capacity - Guarding for Overvoltage protection - For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 65 V IF(AV) IFSM Average Rectified Forward Current TC= 105℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 30 275 TJ Junction Temperature 170 ℃ Tstg Storage Temperature Range -55~170 ℃ ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 15A ; TC= 25℃ IR Maximum Instantaneous Reverse Current VR= 65V, TC= 25℃ MAX 0.79 20 UNIT V μA isc website:.iscsemi.cn...