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MJ10003 Datasheet Silicon NPN Darlington Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor MJ10003.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical.

They are particularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage 400 VCBO Collector- Base Voltage 500 VEBO Emitter-Base Voltage 8 IC Collector Current-Continunous 10 ICM Collector Current-Peak 20 IB Base Current-Continunous 2.5 IBM Base Current-Peak 5.0 PC Collector Power Dissipation @TC=25℃ 150 Tj Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;

MJ10003 Distributor

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