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MJ8503 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONS

Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.

They are particularly suited for line operated switch-mode applications.

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.
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