Datasheet Details
| Part number | MJ8504 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ8504_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor MJ8504.
| Part number | MJ8504 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ8504_InchangeSemiconductor.pdf |
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· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1200 V VCEO(SUS) Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJ8504 | (MJ8504 / MJ8505) NPN Silicon Power Transistor | Motorola |
| Part Number | Description |
|---|---|
| MJ8500 | Silicon NPN Power Transistor |
| MJ8501 | Silicon NPN Power Transistor |
| MJ8502 | Silicon NPN Power Transistor |
| MJ8503 | Silicon NPN Power Transistor |
| MJ8505 | Silicon NPN Power Transistor |
| MJ802 | Silicon NPN Power Transistor |